NanoGalaxy™ PPMOCVD
Plasma-Photon MOCVD platform for wafer-scale 2D TMD growth below 450 °C
The NanoGalaxy PPMOCVD grows atomically uniform 2D transition-metal-dichalcogenide monolayers on full 300 mm wafers at CMOS back-end-of-line temperatures. ICP plasma activation lowers the precursor energy barrier while in-situ UV irradiation removes defects in real time — delivering production-grade material quality at 60 wafers per hour for monolithic 3D integration, advanced memory, and 1 nm-node logic.
<450 °CGrowth temperature
60 sMonolayer window
300 mmWafer size
60 /hrThroughput
Process Performance
| Supported materials | MoS₂, WS₂, MoSe₂, WSe₂ |
|---|---|
| Growth temperature | < 450 °C (adjustable) |
| Growth window | 60 s per monolayer cycle |
| Monolayer growth rate | 0.65 nm/min — atomic-level precision |
| Film uniformity | Atomic-level uniformity across full 300 mm wafer |
| Process gases | H₂, Ar, S(Se) source, Mo/W source |
Plasma & UV Subsystems
| ICP RF power | 3000 W max @ 13.56 MHz |
|---|---|
| ICP function | Precursor activation — lowers reaction energy barrier |
| UV power | 200 W max |
| UV function | In-situ, real-time defect removal during growth |
Platform & Throughput
| Process chambers | 4 independent chambers, parallel processing |
|---|---|
| Wafer size | 12 inch (300 mm) |
| Max throughput | 60 wafers/hr (4-chamber parallel) |
| Susceptor | Rotary, edge-clamp design |
| Chamber access | Lift-up lid for easy maintenance |
Thermal & Facility
| Heating method | Full-line SCR, 6 independent temperature zones |
|---|---|
| Temperature measurement | Dual-mode: thermocouple + IR camera |
| System power | ~35 kW — three-phase AC 380 V, 50/60 Hz |
| Equipment footprint | 4200 × 3600 × 2200 mm (W × D × H) |
Service & Support
| Parts warranty | 5-year replacement of any parts |
|---|---|
| Upgrades | Continuous software & hardware iteration support |
| Process support | 1 on-site equipment engineer + 1 process engineer |
| Process scope | 2D TMD CMOS and 3D monolithic integration flows |
Target Applications
- 3D stacked SRAM
- 3D stacked DRAM
- RRAM
- MRAM
- Radiation-hardened electronics
- 1 nm-node 2D channel logic